Point Nine TETRAFET's
D2840 RF MOSFET
D2840 TetraFET |
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40W -28V - 500MHz GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET |
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FEATURES APPLICATIONS |
ABSOLUTE MAXIMUM RATINGS |
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PD Power Dissipation | 100W | |||||||
BVDSS Drain-source breakdown voltage | 70V | |||||||
VGSS Gate-source voltage | ±20V | |||||||
ID Drain current | 5A | |||||||
Tstg Storage temperature | -65 to 150°C | |||||||
Tj Maximum operating junction temperature | 200°C | |||||||
RTHj-case Thermal resistance junction-case | Max 1.75°C/W | |||||||
ELECTRICAL CHARACTERISTICS (TCASE = 25° unless otherwise stated) |
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Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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PER SIDE |
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BVDSS Breakdown voltage, drain source | VGS=0 | Id=100mA | 70 |
- |
- |
Vdc |
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IDSS Drain leakage current | VDS=28V | VGS=0 | - |
- |
1 |
mAdc |
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IGSS Gate leakage current | VGS=20V | VDS=0 | - |
- |
1 |
µAdc |
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VGS(th) Gate threshold voltage | ID=10mA | VDS=VGS | 1 |
- |
7 |
Vdc |
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gfs Transconductance (300µs pulse) | VDS=10V | ID=1A | 0.8 |
- |
- |
mhos |
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TOTAL DEVICE |
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Gps Common source power gain | Po=40W
|
13 |
- |
- |
dB |
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h Drain efficiency | VDS=28V | IDQ=0.4A |
50 |
- |
- |
% |
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VSWR Load mismatch tolerance | f=500MHz |
20:1 |
- |
- |
- |
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PER SIDE |
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Ciss Input capacitance | VDS=0 VGS=0V f=1MHz |
- |
- |
60 |
pF |
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Coss Output capacitance | VDS=28 VGS=0V f=1MHz |
- |
- |
30 |
pF |
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Crss Reverse transfer capacitance | VDS=28 VGS=0V f=1MHz |
- |
- |
2.5 |
pF |
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HAZARDOUS MATERIAL WARNING US Patents |