Point Nine TETRAFET's

D1006 RF MOSFET

D1006 TetraFET
120W -28V - 175MHz GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET
FEATURES METAL GATE EXTRA LOW Crss BROAD BAND SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN APPLICATIONS HF/VHF/UHF COMMUNICATIONS	ABSOLUTE MAXIMUM RATINGS (Tcase = 25° unless otherwise stated)
	PD Power Dissipation							220W
	BVDSS Drain-source breakdown voltage							70V
	VGSS Gate-source voltage							±20V
	ID Drain current							30A
	Tstg Storage temperature							-65 to 150°C
	Tj Maximum operating junction temperature							200°C
	RTHj-case Thermal resistance junction-case							Max 0.8 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25° unless otherwise stated)
Parameter		Test Conditions			Min.	Typ.	Max.	Unit
BVDSS Breakdown voltage, drain source			VGS=0	Id=100mA	70	-	-	Vdc
IDSS Drain leakage current			VDS=28V	VGS=0	-	-	6	mAdc
IGSS Gate leakage current			VGS=20V	VDS=0	-	-	1	µAdc
VGS(th) Gate threshold voltage			ID=10mA	VDS=VGS	1	-	7	Vdc
gfs Transconductance (300µs pulse)			VDS=10V	ID=1A	4.8	-	-	mhos

Gps Common source power gain			Po=120W		16	-	-	dB
h Drain efficiency			VDS=28V	IDQ=1.2A	50	-	-	%
VSWR Load mismatch tolerance			f=175MHz		20:1	-	-	-

Ciss Input capacitance		VDS=0 VGS=0V f=1MHz			-	-	360	pF
Coss Output capacitance		VDS=28 VGS=0V f=1MHz			-	-	180	pF
Crss Reverse transfer capacitance		VDS=28 VGS=0V f=1MHz			-	-	15	pF

					HAZARDOUS MATERIAL WARNING THE CERAMIC PORTION OF THE DEVICE BETWEEN LEADS AND METAL FLANGE IS BERYLLIUM OXIDE. BERILLIUM OXIDE DUST IS HIGHLY TOXIC AND CARE MUST BE TAKEN DURING HANDLING AND MOUNTING TO AVOID DAMAGE TO THIS AREA. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. US Patents 5,121,176 / 5,179,032 Global patents pending

Point Nine TETRAFET's

D1006 RF MOSFET

D1006 TetraFET