Complete Data Sheet
available here in PDF.

 

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Point Nine TETRAFET's

D1001 RF MOSFET

D1001 TetraFET 

20W -28V - 175MHz
GOLD METALLISED MULTI-PURPOSE
SILICON DMOS RF FET

FEATURES
METAL GATE
EXTRA LOW Crss
BROAD BAND
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN

APPLICATIONS
HF/VHF/UHF COMMUNICATIONS

ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° unless otherwise stated)

PD Power Dissipation 50W
BVDSS Drain-source breakdown voltage 70V
VGSS Gate-source voltage ±20V
ID Drain current 5A
Tstg Storage temperature -65 to 150°C
Tj Maximum operating junction temperature 200°C
RTHj-case Thermal resistance junction-case Max 3.5°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25° unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS Breakdown voltage, drain source VGS=0 Id=100mA
70
-
-
Vdc
IDSS Drain leakage current VDS=28V VGS=0
-
-
1
mAdc
IGSS Gate leakage current VGS=20V VDS=0
-
-
1
µAdc
VGS(th) Gate threshold voltage ID=10mA VDS=VGS
1
-
7
Vdc
gfs Transconductance (300µs pulse) VDS=10V ID=1A
.8
-
-
mhos
 
Gps Common source power gain
Po=20W
16
-
-
dB
h Drain efficiency VDS=28V
IDQ=0.4A
50
-
-
%
VSWR Load mismatch tolerance
f=175MHz
20:1
-
-
-
 
Ciss Input capacitance
VDS=0  VGS=0V  f=1MHz
-
-
60
pF
Coss Output capacitance
VDS=28  VGS=0V  f=1MHz
-
-
30
pF
Crss Reverse transfer capacitance
VDS=28  VGS=0V  f=1MHz
-
-
2.5
pF
       

HAZARDOUS MATERIAL WARNING
THE CERAMIC PORTION OF THE DEVICE BETWEEN LEADS AND METAL FLANGE IS BERYLLIUM OXIDE. BERILLIUM OXIDE DUST IS HIGHLY TOXIC AND CARE MUST BE TAKEN DURING HANDLING AND MOUNTING TO AVOID DAMAGE TO THIS AREA.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

US Patents
5,121,176 / 5,179,032
Global patents pending