Welcome to Point Nine Technologies, Inc.

RF MOSFET Transistors


Point Nine Technologies, Inc. has worked intensively to produce a metal gate field effect transistor process that outperforms the industry standard silicon gate and bipolar process.

Current vertical DMOS devices, "TetraFET's" from Point Nine are capable of greater than 13dB gain at 1 GHz, which is 3-4dB better than the best of similar DMOS devices.


TETRAFET Performance

Point Nine's self aligned metal gate MOSFET's offer the RF engineer the following advantages in high and medium power amplifier applications.

  • Power to 200 watts
  • Gain flatness over very wide bandwidth
  • Frequency DC to 1.5GHz
  • High gain; greater than 10dB broadband
  • High VSWR capability
  • Point Nine RF transistors are available in stock or with very little lead time. The devices are assembled in Newbury Park, CA from significant piece parts inventory.